HIGH THERMAL CONDUCTIVITY DIAMOND SINTERED COMPACT, HEAT SINK FOR MOUNTING SEMICONDUCTOR USING THE SAME, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a heat sink that has compatible properties between high thermal conductivity and matching of thermal expansion among elements to be mounted in increased upsizing and high output of semiconductor elements in order to overcome the problem of the conventional heat sink material in that the material having high thermal conductivity has a low thermal expansion coefficient.

SOLUTION: The high thermal conductivity sintered compact for the heat sink is formed of a composite of a diamond that has the highest thermal conductivity among the materials and copper and group IVa and Va metals that have a large thermal expansion coefficient, so that the necessary thermal conductivity and thermal expansion coefficient are obtained by controlling the particle size and the content of the diamond. The sintering of the sintered compact uses the ultra-high pressure/ elevated temperature sintering method so that the resultant texture does not substantially contain a void, and in order to avoid the incorporation of a copper oxide, the process to prevent the incorporation of oxygen during the step of the raw material and the manufacture is employed.

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