| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for efficiently manufacturing a piezoelectric material device or a ferroelectric device having a piezoelectric material film or a ferroelectric film in which crystal orientations are aligned in a desired direction. <P>SOLUTION: The method for manufacturing the piezoelectric material device includes the steps of forming a buffer layer (12, 55) or a diaphragm (53) of an intermediate film on a substrate (11, 52), forming a lower electrode (13, 542) on the intermediate film, forming the ferroelectric film (24) or the piezoelectric material film (543) on the lower electrode, and forming an upper electrode (25, 541) on the ferroelectric film or the piezoelectric material film. Any of the steps of forming the intermediate film, the lower electrode or the piezoelectric material film includes a step of irradiating the surface to be formed with the intermediate film, the lower electrode or the piezoelectric material film with an ion beam, and a step of forming the intermediate film, the lower electrode or the piezoelectric material film by epitaxial growth. <P>COPYRIGHT: (C)2004,JPO</p> |
