发明名称 PATTERN FORMING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To easily manage a change in characteristics of a light shielding film of a mask for exposure using an organic material as the light shielding film. <P>SOLUTION: Two kinds; a line pattern and a space pattern formed by a negative-to-positive reversal thereof are used as a dimensional inspection pattern to be used in a wafer process. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004177843(A) 申请公布日期 2004.06.24
申请号 JP20020346765 申请日期 2002.11.29
申请人 RENESAS TECHNOLOGY CORP 发明人 IMAI AKIRA;HAYANO KATSUYA
分类号 G03F1/54;G03F1/56;G03F1/68;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/54
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