MAGNETORESISTIVE ELEMENT, MAGNETORESISTIVE MEMORY CELL AND METHOD FOR STORING DIGITAL SIGNAL

摘要

PROBLEM TO BE SOLVED: To provide an element for enabling magnetoresistance characteristics to be improved in a magnetoresistive element. SOLUTION: The magnetoresistive element includes a first ferromagnetic film, a second ferromagnetic film, and a first nonmagnetic film provided between the first ferromagnetic film and the second ferromagnetic film. The first ferromagnetic film is more easily rotated by magnetization than the second ferromagnetic film, and the magnetically effective thickness of the first ferromagnetic film is 2 nm or less. At least one of the first ferromagnetic film and the second ferromagnetic film may have a magnetization orientation in the plane direction of the film. COPYRIGHT: (C)2004,JPO