| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for analyzing an InGaN layer, which can obtain a ratio at which indium atoms exist in a mixed crystal of the In<SB>x</SB>Ga<SB>1-x</SB>N layer and a ratio, at which they exist as the indium metal. <P>SOLUTION: In the method, two or more In<SB>x</SB>Ga<SB>1-x</SB>N layers, which have composite ratios x which are different from each other are made up under such conditions that only mixture ratios of starting material gas are changed, while keeping respective temperature conditions and pressure conditions which are identical to each other. Then, a process for analyzing the coordination number of the In atoms ranging near the atomic distance of two first In atoms which are located the most adjacent is carried out for arbitrary In atoms in all of the two or more In<SB>x</SB>Ga<SB>1-x</SB>N layers, and regression line of changes in the coordination number versus the composition ratio x is drawn, and the ratio of the first In atoms existing in the In<SB>x</SB>Ga<SB>1-x</SB>N layers is obtained from the slope of the regression line, and the ratio of the second In atoms is obtained from the intercept of the regression line. <P>COPYRIGHT: (C)2004,JPO</p> |
