发明名称 LASER IRRADIATING DEVICE AND METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a laser irradiating device capable of performing efficient, uniform annealing by using a simple optical system and laser beams having an attenuation region, to provide a laser irradiation method using such laser irradiating device, and to provide a method for manufacturing a semiconductor device including the laser irradiation method in a process. <P>SOLUTION: The laser irradiation device comprises a plurality of lasers, a means for composing a plurality of laser beams emitted from the plurality of lasers into one laser beam on a stage, and a means for moving the composed laser beams while a shape is being maintained on the stage. Then, a semiconductor film is irradiated with the laser beams by using such a laser irradiating device to crystallize the semiconductor film or activate impurity elements. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004179389(A) 申请公布日期 2004.06.24
申请号 JP20020343778 申请日期 2002.11.27
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 TANAKA KOICHIRO
分类号 B23K26/06;B23K26/073;B23K26/08;H01L21/20;H01L21/268;H01L21/28;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/786;(IPC1-7):H01L21/268 主分类号 B23K26/06
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