| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon epitaxial wafer manufacturing device capable of manufacturing silicon epitaxial wafers which are products of high resistivity, stabilizing the resistivity of the wafers, and eliminating the necessity of substituting work of dopant gas bumps or mass flow controllers. SOLUTION: A 2nd dilution device 200 arranged on the prestage of a 1st dilution device 100 is provided with a 1st supply line 201 for supplying dopant gas of prescribed concentration, which is obtained by mixing dopant gas supplied from a dopant gas bomb 1 with dilution gas supplied from a dilution gas bomb 2 to a dopant gas supply port 113 of the 1st dilution device 100; a 2nd supply line 202 for directly supplying dopant gas supplied from the dopant gas bomb 1 to a dopant gas supply port 113 of the 1st dilution device 100 and a switching means 203 for selectively switching the 1st supply line 201 or the 2nd supply line 202. COPYRIGHT: (C)2004,JPO
|
