NOVEL LAYER OF HIGH-K INTER-POLY DIELECTRIC

摘要

A new Inter Poly Dielectric (IPD) layer is provided for use in creating ultra-small gate electrodes. A first and a second high-k dielectric film are provided which remain amorphous at relatively high processing temperatures. The first high-k dielectric film is of Al3O5-ZrO2-Al3O5, the second high-k dielectric film is aluminum doped ZrO2 or HfO2.