发明名称 Resistive structure integrated in a semiconductor substrate
摘要 A resistive structure integrated in a semiconductor substrate and having a suitably doped polysilicon region that is completely surrounded by a dielectric region so that the resistive structure is isolated electrically from other components jointly integrated in the semiconductor substrate.
申请公布号 US2004119137(A1) 申请公布日期 2004.06.24
申请号 US20030729721 申请日期 2003.12.05
申请人 发明人 LEONARDI SALVATORE;MODICA ROBERTO
分类号 H01L21/02;H01L27/08;(IPC1-7):H01L29/00 主分类号 H01L21/02
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