发明名称 |
Bypass gas feed system and method to improve reactant gas flow and film deposition |
摘要 |
A method and reactant gas bypass system for carrying out a plasma enhanced chemical vapor deposition (PECVD) process with improved gas flow stability to avoid unionized reactant precursors and thickness non-uniformities the method including providing a semiconductor process wafer having a process surface within a plasma reactor chamber for carrying out at least one plasma process; supplying at least one reactant gas flow at a selected flow rate to bypass the plasma reactor chamber for a period of time to achieve a pre-determined flow rate stability; and, redirecting the at least one reactant gas flow into the plasma reactor chamber to carry out the at least one plasma process.
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申请公布号 |
US2004118342(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20020323950 |
申请日期 |
2002.12.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG YI-LUNG;LIAO MO-CHEN;TSAI ERIC;WU SZU-AN;WANG YING-LUNG |
分类号 |
C23C16/44;C23C16/455;C23C16/509;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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