LOW DIELECTRIC CONSTANT FILMS DERIVED BY SOL-GEL PROCESSING OF A HYPERBRANCHED POLYCARBOSILANE
摘要
A hybrid organic/inorganic organosilicon networked polymer material having a compositional formula [Si(O)CH2]n and a dielectric constant of less than 2.4 is provided. The material may be used as an interlayer dielectric film in a semiconductor device. The film is preferably fabricated by a sol-gel process using an alkoxy substituted hyperbranched polycarbosilane precursor material.
申请公布号
WO2004003938(A3)
申请公布日期
2004.06.24
申请号
WO2003US19523
申请日期
2003.06.23
申请人
RENSSELAER POLYTECHNIC INSTITUTE;INTERRANTE, LEONARD, VINCENT;LU, NING