发明名称 INFRARED SENSOR UNIT
摘要 PURPOSE: An infrared sensor unit is provided to improve sensor characteristics while constantly maintaining the sensor characteristics for a long period of time by increasing dielectric constant of the infrared sensor unit in a normal temperature. CONSTITUTION: An infrared sensor unit(100) includes a substrate(102) having a plate shape, an infrared sensor(108) attached to an upper surface of the substrate, and a conductive wire(110) for electrically connecting the infrared sensor(108) to the substrate(102). An FET(112) is connected to a lower surface of the substrate. A plurality of conductive leads(114) are connected to a lower portion of the substrate. The leads(114) pass through a base(116). A cap(118) is coupled to an outer portion of the base(116). A lens(120) is coupled to an upper portion of the cap(118) so as to allow infrared ray to pass through the infrared sensor(108).
申请公布号 KR20040053600(A) 申请公布日期 2004.06.24
申请号 KR20020080748 申请日期 2002.12.17
申请人 KEC CORP. 发明人 AHN, BYEONG GI;HAN, MYEONG SU;KANG, DAE SEOK
分类号 G01J1/00 主分类号 G01J1/00
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