| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of operating a NOR-type flash memory device where SONOS (silicon-oxide-nitride-oxide-semiconductor) is adopted. <P>SOLUTION: The method of operating the flash memory device is one that devices are selectively programmed by using a channel hot electron injection and devices are erased by Fowler-Nordheim tunneling and hot hole injection. Namely, about 8 to 12 V is applied to a selected word line at the time of programming, and about 3 to 6 V is applied to a selected bit line. The word line is earthed at the time of erasing, or about 13 to 18 V is applied to a substrate, about -8 V is applied to the selected word line and about 6 V is applied to the substrate to allow the bit line and a source line to be floating. <P>COPYRIGHT: (C)2004,JPO</p> |
