| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a light receiving area in an integrated circuit and having high durability while realizing miniaturized packaging. SOLUTION: In the semiconductor device 100, a re-wiring layer 20 taken around an electrode 14 is formed on a semiconductor chip 10 on which an integrated circuit (an area shown by 12 in the figure) is formed, a bump 22 to be electrically connected to external connecting pads 24 is formed on the re-wiring layer 20, and the peripheries of the re-wiring layer 20 and the bump 22 are sealed by sealing resin 26 so as to open the surface of the integrated circuit. Then a light penetrating cap 30 is engaged with a step 22a formed on the tip of the bump 22 so as to cover the aperture of the sealing resin 26. COPYRIGHT: (C)2004,JPO |
