| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which can reduce the off-state leakage current on standby, and which can also reduce the leakage current paths, resulting in preventing an increase in manufacturing processes. SOLUTION: The semiconductor integrated circuit device comprises a network logic circuit block having a MOS transistor which performs a logic operation constituted of a pass transistor logic, a buffer circuit block which amplifies an output signal of the network logic circuit block, and MOS transistors 44 and 50 which are formed in a semiconductor layer of a fully-depleted type SOI substrate wherein the semiconductor layer is formed on a semiconductor substrate 51 via a buried insulation layer 52. COPYRIGHT: (C)2004,JPO
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