| 摘要 |
PROBLEM TO BE SOLVED: To allow AGP operation and to reduce dark current, related to a solid-sate imaging element of frame transfer system where an imaging part comprises a vertical shift resister. SOLUTION: The width of a channel region 10 below a transfer electrode 14-1 is narrower than below transfer electrodes 14-2 and 14-3. A narrow channel 16 formed below the transfer electrode 14-1 provides hallower channel potential than a wide channel 18 due to narrow channel effect. A potential well is formed at the wide channel 18 with the potential of the narrow channel 16 working as a barrier if pinning state is presented with a voltage applied to each phase of the transfer electrode 14 in off state by AGP operation. Thus, the information charge generated according to incident light is accumulated below the transfer electrodes 14-2 and 14-3. COPYRIGHT: (C)2004,JPO
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