发明名称 |
POWER SWITCHING TRANSISTOR WITH LOW DRAIN TO GATE CAPACITANCE |
摘要 |
A transistor (10) is formed on a semiconductor substrate (12) with a first surface (19) for forming a channel (40). A gate dielectric (22) has a first thickness overlying a first portion of the channel, and a dielectric film (20) overlies a second portion of the channel and has a second thickness greater than the first thickness. The second thickness reduces the drain to gate capacitance of the transistor, thereby improving its switching speed and frequency response. |
申请公布号 |
WO2004053999(A2) |
申请公布日期 |
2004.06.24 |
申请号 |
WO2003US32406 |
申请日期 |
2003.10.14 |
申请人 |
SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C. |
发明人 |
VENKATRAMAN, PRASAD |
分类号 |
H01L29/08;H01L29/423;H01L29/739;H01L29/78 |
主分类号 |
H01L29/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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