发明名称 |
SELF ALIGNED SHALLOW TRENCH ISOLATION WITH IMPROVED COUPLING COEFFICIENT IN FLOATING GATE DEVICES |
摘要 |
The present invention provides a method for manufacturing a floating gate type semiconductor device on a substrate having a surface (2), and a device thus manufactured.The method comprises: - forming, on the substrate surface, a stack comprising an insulating film (4), a first layer of floating gate material (6) and a layer of sacrificial material (8), - forming at least one isolation zone (18) through the stack and into the substrate (2), the first layer of floating gate material (6) thereby having a top surface and side walls (26), - removing the sacrificial material (8), thus leaving a cavity (20) defined by the isolation zones (18) and the top surface of the first layer of floating gate material (6), and filling the cavity (20) with a second layer of floating gate material (22), the first layer of floating gate material (6) and the second layer of floating gate material (22) thus forming together a floating-gate (24). |
申请公布号 |
WO2004053992(A2) |
申请公布日期 |
2004.06.24 |
申请号 |
WO2003IB04949 |
申请日期 |
2003.10.31 |
申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V.;VAN SCHAIJK, ROBERTUS, T., F.;VAN DUUREN, MICHIEL, J. |
发明人 |
VAN SCHAIJK, ROBERTUS, T., F.;VAN DUUREN, MICHIEL, J. |
分类号 |
H01L21/8247;H01L27/115 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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