METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to obtain conserving the contact characteristics of a lower and upper copper layer and to securing process stability of removing CuO layer of the lower copper layer. CONSTITUTION: A lower interlayer dielectric(11) is formed on a semiconductor substrate(10). A lower contact hole(12) is formed at the predetermined portion of the lower interlayer dielectric. The lower contact hole is filled with a lower copper layer(15). A planarization is carried out on the lower copper layer. A CuO layer which is generated on the lower copper parasitically is removed from the lower copper layer. An insulating layer(33) is deposited on the resultant structure as a copper diffusion barrier. An upper interlayer dielectric(35) is deposited on the insulating layer. An upper contact hole(36) is formed at the upper interlayer dielectric for exposing the lower copper layer. Preferably, a CuN layer(31) is formed on the lower copper layer for reducing the thickness of the insulating layer after the CuO layer removing process. Preferably, the CuO layer is removed by carrying out a plasma treatment using ammonia or nitrogen gas.