METHOD FOR FABRICATING POLYSILICON THIN FILM TO PROPERLY CONTROL SIZE OF GRAIN IN SOLID STATE CRYSTALLIZATION

摘要

PURPOSE: A method for fabricating a polysilicon thin film is provided to properly control the size of a grain in solid state crystallization by shortening a time interval of generating a nucleus and by arbitrarily controlling the density of a crystalline nucleus according to a process condition. CONSTITUTION: A crystallized silicon nucleus(21) is formed on a substrate(10). Amorphous silicon is deposited on the crystallized silicon nucleus and the substrate. The amorphous silicon is maintained in a predetermined temperature atmosphere and is crystallized with respect to the crystallized nucleus. The size of a polysilicon grain is controlled by adjusting the density of grain silicon nuclei when the crystallized silicon nucleus is formed on the substrate.