METHOD FOR FORMING METAL OXIDE THIN FILM OF SEMICONDUCTOR DEVICE BY CVD METHOD AND CAPACITOR FORMING METHOD USING THE SAME TO EMBODY HIGH CAPACITANCE

摘要

PURPOSE: A method for forming a metal oxide thin film of a semiconductor device by CVD(chemical vapor deposition) method is provided to embody high capacitance by using a Ti-based oxide ferroelectric layer as a dielectric layer of a capacitor. CONSTITUTION: A Ti source that is formed by melting Ti(C11H19O2)2(O-t-C4H9)2 with a solvent and an additive source are evaporated to form reaction gas. The evaporated reaction gas is transferred to the upper surface of a semiconductor substrate by using carrier gas to form a Ti-based oxide ferroelectric layer on the semiconductor substrate.