| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a semiconductor device is much deteriorated in properties of transmitting high-frequency electric signals, wherein the semiconductor device is composed of a semiconductor element transmitting/receiving high-frequency electric signals and a package housing the semiconductor element. SOLUTION: The semiconductor device is equipped with a base 1 provided with a mount part 1a on which a semiconductor element 6, transmitting/receiving high-frequency electric signals, is mounted, a plurality of grounding wiring conductors 2b and a first wiring conductor 2a which are derived from the mount part 1a of the base 1 extending to the undersurface of the base 1, a plurality of grounding pads 3b and an input/output pad 3a which are formed on the under surface of the base 1 and electrically connected to the grounding wiring conductors 2b and the first wiring conductor 2a, a second wiring conductor 4 which is derived from the mount 1a of the base 1 extending to the top surface or side of the base 1, and a connector 5 which is composed of a conductive wire 5a electrically connected to the second wiring conductor 4 and an insulating sheath 5b. The input/output pad 3a is 0.196 mm<SP>2</SP>or below in plane area and located at the undersurface center region of the base 1. COPYRIGHT: (C)2004,JPO |
