| 摘要 |
PROBLEM TO BE SOLVED: To provide a variable capacity thin-film capacitor which can suppress a capacity variation caused by a radio frequency signal, enhance a capacity variation caused by D.C. bias, decrease the number of thin film layers sequentially coated, and suppress characteristic defect or reliability reduction, and also to provide a high frequency component using the capacitor. SOLUTION: First to third variable capacitance elements C1 to C3, capacitances of which vary with applied voltages and which are connected in series, are provided on a supporting substrate 1. A first bias line is provided between the input terminal end of the first variable capacitance element C1 and a junction point between the second and third elements C2, C3. A second bias line is provided between a junction point of the first and second elements C1, C2 and an output terminal end of the third element C3. First and second bias lines 3a to 3c, 6 are provided on the substrate 1. COPYRIGHT: (C)2004,JPO
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