| 摘要 |
A silicon nitride read only memory, having a control gate formed on a substrate, a source region and a drain region formed in the substrate at two sides of the control gate, a charge capture layer between the control gate and the substrate, a stacked dielectric layer between the control gate and the charge capture layer, and a channel in the substrate under the charge capture layer between the source and drain regions. By forming the silicon oxide/silicon nitride/silicon oxide stacked dielectric layer, the reliability of the memory device is enhanced since silicon nitride provides a better effect for isolating the charge capture layer and the control gate.
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