发明名称 METHOD FOR CO-FABRICATING STRAINED AND RELAXED CRYSTALLINE AND POLY-CRYSTALLINE STRUCTURES
摘要 One embodiment of the present invention provides a system for co fabricating strained and relaxed crystalline, poly-crystalline, and amorphous structures in an integrated circuit device using common fabrication steps. The system operates by first receiving a substrate. The system then fabricates multiple layers on this substrate. A layer within these multiple layers includes both strained structures and relaxed structures. These strained structures and relaxed structures are fabricated simultaneously using common fabrication steps.
申请公布号 WO03098664(A3) 申请公布日期 2004.06.24
申请号 WO2003US15598 申请日期 2003.05.15
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 PETERSON, JEFFREY;HUNT, CHARLES
分类号 H01L21/20;H01L21/268 主分类号 H01L21/20
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