| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for solving problems of surface damages and residual gallium by gallium ion irradiation when a mask is repaired by currently established FIB (focused ion beam) techniques, and to provide an apparatus to carry out the method. <P>SOLUTION: In the apparatus, one sample chamber is provided not only with an FIB barrel but also with an electron beam barrel for processing. In repair by eliminating an excess part such as a black defect of the mask, a protruding defect in a phase shift film and insufficient engraving of the glass substrate, the method for repairing a mask is carried out through a step of roughly correcting by etching using focused ion beams and a step of finishing by using electron beams. Thus surface damages and residual gallium by gallium irradiation are eliminated. <P>COPYRIGHT: (C)2004,JPO</p> |
