| 摘要 |
A method of etching a low-k dielectric layer. A substrate having a low-k dielectric layer to be etched, on which an amorphous carbon doped layer is formed over the low-k dielectric layer by plasma enhanced chemical vapor deposition (PECVD), a resist layer is formed over the amorphous carbon doped layer , and the resist layer is patterned to define a first opening thereby forming a resist mask. The amorphous carbon doped layer is etched to define a second opening, thereby forming a hardmask, the resist mask is stripped, and the low-k dielectric layer not covered by the hardmask is etched to form a third opening as a trench or via.
|
