Semiconductor device and manufacturing method for silicon oxynitride film

摘要

The present invention provides a semiconductor device comprising: a silicon based semiconductor substrate provided with a step including an non-horizontal surface, a horizontal surface and a connection region for connecting the non-horizontal surface and the horizontal surface; a gate insulating film formed in at least a part of the step; and a gate electrode formed on the gate insulating film, wherein the entirety or a part of the gate insulating film is formed of a silicon oxynitride film that contains a rare gas element at a area density of 10<10 >cm<-2 >or more in at least a part of the silicon oxynitride film.