Electron beam device for exposing a mask in production of integrated circuits comprises electron source for producing electron beam in closed vacuum chamber, and ion source for preparing positively charged ions

摘要

An electron beam device comprises an electron source (10) for producing an electron beam (11) in a closed vacuum chamber, and an ion source (17) for preparing positively charged ions (18) close to an impact region so that secondary and/or back-scattering electrons (14) of the electron beam recombine with the ions. An Independent claim is also included for avoiding a surface charge on a surface in an electron beam device.