发明名称 |
FORMATION OF CONTACTS ON SEMICONDUCTOR SUBSTRATES |
摘要 |
<p>Embodiments of the invention are concerned with a method of manufacturing a radiation detector having one or more conductive contacts on a semiconductor substrate, and comprise the steps of: applying a first conductive layer to a first surface of the semiconductor substrate; applying a second conductive layer to form a plurality of contiguous layers of conductive materials, said plurality of contiguous layers including said first conductive layer; and selectively removing parts of said plurality of contiguous layers so as to form said conductive contacts, the conductive contacts defining one or more radiation detector cells in the semiconductor substrate.</p> |
申请公布号 |
WO2004038809(A3) |
申请公布日期 |
2004.06.24 |
申请号 |
WO2003GB04577 |
申请日期 |
2003.10.23 |
申请人 |
GOLDPOWER LIMITED;PUHAKKA, KIMMO;BENSON, IAIN |
发明人 |
PUHAKKA, KIMMO;BENSON, IAIN |
分类号 |
H01L21/00;H01L27/146;H01L31/00;H01L31/0224;H04N3/00;H04N3/15;(IPC1-7):H01L31/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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