发明名称 |
PREPARATION METHOD OF FERROELECTRIC SINGLE CRYSTAL MEMBRANE STRUCTURE |
摘要 |
PURPOSE: A preparation method of a ferroelectric single crystal membrane structure is provided to enhance a performance of an element or member containing a ferroelectric thin film or thick film. CONSTITUTION: The preparation method of a ferroelectric single crystal membrane structure comprises forming a conductive metal layer and a substrate layer(4) on one side of the ferroelectric single crystal thin plate, in order by a vacuum evaporation. The preparation method also comprises grinding the single crystal thin plate after forming the substrate layer. The preparation method also comprises forming a layer of a material selected from SiO2, MgO, Al2O3 and ZnO before forming the substrate layer. |
申请公布号 |
KR20040053747(A) |
申请公布日期 |
2004.06.24 |
申请号 |
KR20030051431 |
申请日期 |
2003.07.25 |
申请人 |
IBULE PHOTONICS |
发明人 |
CHOI, BYEONG JU;EUN, JAE HWAN;LEE, SANG GU;LIM, SEONG MIN |
分类号 |
H01L41/187;B81C3/00;C04B37/00;C30B29/30;C30B33/00;H01L21/20;H01L21/316;H01L21/762;H01L41/09;H01L41/18;H01L41/22;H01L41/29;H01L41/313;H01L41/337;H03H3/08 |
主分类号 |
H01L41/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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