发明名称 PLASMA PROCESSING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that easily evaluates a removed film thickness after plasma processing in a short time. <P>SOLUTION: A shield plate 19 having a hole 20 is provided above a substrate 13 at a fixed interval, and an oxygen radical in plasma ashes resist on the substrate 13 through the hole 20; and an irradiated part is mainly an opening part of the hole 20, and the part of the outermost shell circumference ashed by the irradiation is sectioned as if a film were obliquely digged, so the film thickness can be estimated with the number of rings of interference fringes viewed on the top surface of the film. <P>COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179488(A) 申请公布日期 2004.06.24
申请号 JP20020345523 申请日期 2002.11.28
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 SUZUKI NAOKI;AOKURA ISAMU;SASAOKA TATSUO
分类号 H05H1/46;H01L21/3065 主分类号 H05H1/46
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