| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus using a laser crystallizing method which can enhance the efficiency of a substrate treatment. <P>SOLUTION: The portion retained on the substrate after patterning of a semiconductor film is grasped according to a mask. The semiconductor film is partly crystallized by determining the scanning portion of a laser beam so that the portion obtained by at least patterning can be crystallized, and allowing a beam spot to be struck on the scanning portion to partly crystallize the semiconductor film. The beam spot is shielded at the portion of a low output energy via a slit. In this laser emitting apparatus, the laser beam is not scanned and emitted to the entire semiconductor film but scanned so that at least necessary indispensable portion can be crystallized at the lowest limit. With this constitution, a time for emitting the laser beam to the portion to be removed by patterning after the semiconductor film is crystallized can be omitted. <P>COPYRIGHT: (C)2004,JPO</p> |
