METHOD OF PRODUCING SUBSTRATE BY TRANSFERRING DONOR WAFER CONTAINING DIFFERENT SPECIES AND ASSOCIATED DONOR WAFER

摘要

PROBLEM TO BE SOLVED: To form a semi-insulating InP layer compensated with Fe using a Smart-Cut technique.

SOLUTION: After plasma vapor deposition is carried out to form a bonding layer 21 of oxide etc on a surface of a donor wafer 20 made of InP, atomic species is implanted into the wafer to form an embrittlement zone 22. Then the donor wafer 20 and a silicon support 10 having an oxide layer 11 formed by thermal oxidation are bonded at the bonding layers 21 and 11. The assembly is annealed to make a crack in the InP layer along the embrittlement plane to break it off. The remaining embrittlement layer 22 is thinned by means of etching or polishing and treated at high temperature of 900°C in a gas mixture composed of iron and phosphorus to obtain a semi-insulating InP layer.

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