发明名称 PN JUNCTION ELEMENT AND ITS MANUFACTURE
摘要 <p><P>PROBLEM TO BE SOLVED: To a pn junction element which has such a layer that selectively covers a p type region and an n type region and is made of cylindrical carbon molecules, and also to provide a method for manufacturing the element. <P>SOLUTION: An silicon oxide film is formed on a silicon substrate, on which first and second electrodes 3 and 4 are formed. A dispersion having a p type carbon natotube 1 well dispersed therein is applied on the resultant substrate, and then its solvent is evaporated so that the nanotube 1 is electrically connected to side surfaces of the first and second electrodes 3, 4 (Figure (a)). a layer of gold or the like is formed by deposition on the resultant substrate, an unnecessary part is removed therefrom by electronic beam lithography to thereby form a conducting/heating electrode 6 (Figure (b)). A current is supplied to the nanotube 1 between the second electrode 4 and the electrode 6 to heat the nanotube, so that adsorbed oxygens are desorpted from the nanotube to convert that heated region of the nanotube to an n type and to form a pn junction between the n type region and the not-conducted p type region 1 (Figure (c)). <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2004179564(A) 申请公布日期 2004.06.24
申请号 JP20020346614 申请日期 2002.11.29
申请人 SONY CORP 发明人 SHIRAISHI SEIJI
分类号 H01L21/331;G11C13/02;H01L21/329;H01L21/8238;H01L27/092;H01L29/06;H01L29/73;H01L29/786;H01L29/861;(IPC1-7):H01L29/06;H01L21/823 主分类号 H01L21/331
代理机构 代理人
主权项
地址