| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of growing an artificial quartz crystal having low linear defect density and the artificial quartz crystal having the low linear defect density. SOLUTION: In the method of growing the artificial quartz crystal manufactured by a hydrothermal method, the difference between the lattice constant of the quartz crystal to be grown and the lattice constant of a seed crystal is made small considering the growing environment by using the seed crystal containing impurity having a concentration expected in the artificial quartz crystal to be grown. COPYRIGHT: (C)2004,JPO
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