发明名称 Isolated micro pressure sensor and method for making the same
摘要 A method for producing an isolated micro pressure sensor and the process for producing the same are disclosed. The method for manufacturing the isolated micro pressure sensor includes: (A) etching one surface of a substrate to form a rampart with an open cavity on the center of its top surface and with plate portions surrounding the rampart; (B) forming a plurality of first contact pads on said plate portions of the substrate outside said rampart; (C) forming a plurality of second contact pads, a plurality of piezo-resistors, thermo sensors, temperature-controlling elements and circuit patterns on a bulk silicon wafer; (D) forming a plurality of grooves on the periphery of the bulk silicon wafer; (E) bonding the bulk silicon wafer and the substrate; and (F) thinning said bulk silicon wafer until said bulk silicon wafer forming a thin membrane.
申请公布号 US2004118213(A1) 申请公布日期 2004.06.24
申请号 US20020325868 申请日期 2002.12.23
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 OU YEONG-JEONG;SHING TAIKANG;CLARK JUSTIN;YANG KE-SHIENG;CHUNG JENG-SHIE
分类号 G01L9/00;G01L27/00;(IPC1-7):G01L9/00 主分类号 G01L9/00
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