发明名称 Creating hermetically sealed, dielectrically isolating trenches for mechanical-electrical sensor structures involves sealing hollows formed when filling by low-pressure deposition from widened regions
摘要 The method involves filling with a deposition process, whereby the trenches are slightly widened at defined positions and a low pressure deposition method is used so that hollow chamber channels formed when filling in the region of the normal width trench by closing the upper trench region with a filler material (9) are hermetically sealed by low-pressure deposition from the widened region in the longitudinal trench direction. Independent claims are also included for the following: (a) an arrangement manufactured in accordance with the inventive method (b) and a device with a wafer with trenches .
申请公布号 DE10257098(A1) 申请公布日期 2004.06.24
申请号 DE20021057098 申请日期 2002.12.05
申请人 X-FAB SEMICONDUCTOR FOUNDRIES AG 发明人 FREYWALD, KARLHEINZ
分类号 B81C1/00;H01L21/764;(IPC1-7):H01L21/762 主分类号 B81C1/00
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