发明名称 |
Creating hermetically sealed, dielectrically isolating trenches for mechanical-electrical sensor structures involves sealing hollows formed when filling by low-pressure deposition from widened regions |
摘要 |
The method involves filling with a deposition process, whereby the trenches are slightly widened at defined positions and a low pressure deposition method is used so that hollow chamber channels formed when filling in the region of the normal width trench by closing the upper trench region with a filler material (9) are hermetically sealed by low-pressure deposition from the widened region in the longitudinal trench direction. Independent claims are also included for the following: (a) an arrangement manufactured in accordance with the inventive method (b) and a device with a wafer with trenches .
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申请公布号 |
DE10257098(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
DE20021057098 |
申请日期 |
2002.12.05 |
申请人 |
X-FAB SEMICONDUCTOR FOUNDRIES AG |
发明人 |
FREYWALD, KARLHEINZ |
分类号 |
B81C1/00;H01L21/764;(IPC1-7):H01L21/762 |
主分类号 |
B81C1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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