| 摘要 |
PURPOSE: A method for removing photoresist of a semiconductor device is provided to prevent the corrosion of a contact plug by minimizing the charge of an upper metal line and completely removing a photoresist pattern. CONSTITUTION: A conductive material layer is formed on a semiconductor substrate structure. A photoresist pattern is formed on the conductive material layer. An upper metal line(203) is formed by selectively patterning the conductive material layer using the photoresist pattern as a mask. The photoresist pattern is completely removed by carrying out an etching process using O2 and CF4 gas in a low plasma density state. The pressure applied to the resultant structure is 750-1000 mTorr.
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