| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a versatile method for manufacturing an integrated circuit by a flexible film formed by an extremely thin stress reducing dielectric material such as silicon dioxide and silicon nitride and a semiconductor layer. <P>SOLUTION: Semiconductor devices (24, 26, 28 to 30) are formed in a semiconductor layer of a film (36). At first, the semiconductor film layer (36) is formed from a substrate (18) of standard thickness, and next, a thin surface layer of the substrate is etched or polished. In other version, a support for the conventional bonding integrated circuit die and a flexible film as electrically mutual connection are used, and a mutual connection part is formed in a plurality of layers in the film. By this method, a plurality of dies can be connected to one of the films, and the film is subsequently packaged as a multi-chip module. <P>COPYRIGHT: (C)2004,JPO</p> |
