| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which the area occupied by a peripheral circuit with respect to one pixel region is decreased, and to provide a method for manufacturing the device. SOLUTION: The semiconductor device has a pixel region 1, peripheral circuit regions 2a to 2c disposed in at least a part of the periphery of the above pixel, and wiring formed in the peripheral circuit regions, and the wiring consists of multilayer wiring having two or more layers. At least one layer of the wiring in the multilayer wiring is made of a low resistance material. A transistor is fabricated in the peripheral circuit regions, and the multilayer wiring having two or more layers is formed above the transistor. COPYRIGHT: (C)2004,JPO |
