发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent dielectric breakdown from being easily generated while shielding an electric field from a wiring layer. SOLUTION: A floating electrode 201 is electrostatically coupled with an electrode 202 through an electrostatic capacitor C1, the floating electrode 201 is electrostatically coupled with an electrode 203 through an electrostatic capacitor C2, and an electrode 200 is electrostatically coupled with the floating electrode 201 through an electrostatic capacitor C3. The potential of the floating electrode 201 is lower than potential impressed to the electrode 200. The electrode 201 covers the upper part of the electrode 200. For instance, it is desirable to set elevation anglesα,βobtained by observing the ends with widthwise direction of the electrode 201 from the ends of the widthwise direction of the electrode 200 in a cross-sectional view are≤45°. COPYRIGHT: (C)2004,JPO
申请公布号 JP2004179496(A) 申请公布日期 2004.06.24
申请号 JP20020345724 申请日期 2002.11.28
申请人 MITSUBISHI ELECTRIC CORP 发明人 SHIMIZU KAZUHIRO
分类号 H01L23/52;H01L21/3205;H01L21/822;H01L21/8234;H01L21/8238;H01L23/522;H01L23/528;H01L23/552;H01L23/58;H01L23/60;H01L27/04;H01L27/06;H01L27/088;H01L27/092;H01L29/06;H01L29/40;H01L29/423;H01L29/78;(IPC1-7):H01L21/822;H01L21/823;H01L21/320 主分类号 H01L23/52
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