| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem wherein a semiconductor device is deteriorated in properties of transmitting high-frequency electric signals due to reflections or the like when the high-frequency electric signals are transmitted in the semiconductor device, wherein the semiconductor device comprises a semiconductor element transmitting/receiving electric signals of high frequencies and a package housing the semiconductor element. SOLUTION: The semiconductor device using the semiconductor element housing package is equipped with a base 1 provided with a mount 1a mounted with the semiconductor element 6 transmitting/receiving high-frequency electric signals, grounding wiring conductors 2b and a first wiring conductor 2a which are derived from the mount 1a of the base 1 extending over the under surface of the base 1, grounding pads 3b and an input/output pad 3a which are formed on the undersurface of the base 1 and electrically connected to the grounding wiring conductor 2b and the first wiring conductor 2a, a second wiring conductor 4 which is derived from the mount 1a of the base 1 extending over the top surface or side of the base 1, a connector 5 composed of a conductive wire 5a electrically connected to the second wiring conductor 4 and an insulating sheath 5b, and a grounding metal layer 9 which is provided inside the base 1 and connected to the grounding wiring conductor 2b. Furthermore, the grounding metal layer 9 is confronted with a region of the second wiring conductor 4 except its other region joined to the wire 5a of the connector 5. COPYRIGHT: (C)2004,JPO |
