| 发明名称 |
MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of semiconductor device which performs anisotropic etching to a conductive layer in vertical direction or substantially vertical direction. SOLUTION: The manufacturing method of a semiconductor device includes the following steps: forming an insulating layer in the upper layer of a semiconductor layer; forming a conductive layer including at least any one of Ta and TaN; and etching the conductive layer using a gas containing SiCl<SB>4</SB>and NF<SB>3</SB>. COPYRIGHT: (C)2004,JPO
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| 申请公布号 |
JP2004179612(A) |
申请公布日期 |
2004.06.24 |
| 申请号 |
JP20030130757 |
申请日期 |
2003.05.08 |
| 申请人 |
SEIKO EPSON CORP |
发明人 |
SHIMADA HIROYUKI |
| 分类号 |
H01L21/28;H01L21/3065;H01L21/3213;H01L21/336;H01L21/8238;H01L21/84;H01L27/08;H01L27/092;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/306;H01L21/321;H01L21/823 |
主分类号 |
H01L21/28 |
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