| 摘要 |
PROBLEM TO BE SOLVED: To provide a sheet for a thin film transistor whose cost can be reduced by removing the patterning process of a semiconductor active layer using a simple method. SOLUTION: In the sheet for the thin film transistor, at least a gate bus line, a source bus line, a source electrode, a drain electrode, and a semiconductor active layer are formed on a sheetlike support. The semiconductor active layer is subjected to processing so as to be substantially parted on the gate bus line, after the semiconductor active layer is formed on the whole surface. COPYRIGHT: (C)2004,JPO
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