发明名称 |
Photosemiconductor device, method for fabricating photosemiconductor device and method for driving photosemiconductor device |
摘要 |
An light oscillation part including an active layer 20 for generating light by current injection, a tuning layer 24 with an intermediate layer 22 formed between the active layer 20 and the tuning layer 24, for varying an oscillation wavelength by current injection and a diffraction grating 28 formed near the active layer 20 and the tuning layer 24, and a light amplification part including an active layer 20 for amplifying light by current injection are formed on a semiconductor substrate. Light oscillation elements having wide wavelength variation ranges and the light amplification are integrated on a semiconductor substrate, whereby wide wavelength variation ranges can be obtained and the output light can be much increased.
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申请公布号 |
US2004119079(A1) |
申请公布日期 |
2004.06.24 |
申请号 |
US20030690469 |
申请日期 |
2003.10.22 |
申请人 |
HAYAKAWA AKINORI;SATO YOSHIHIRO;MORITO KEN;SEKINE NORIHIKO |
发明人 |
HAYAKAWA AKINORI;SATO YOSHIHIRO;MORITO KEN;SEKINE NORIHIKO |
分类号 |
H01S5/026;H01L27/15;H01S5/028;H01S5/042;H01S5/06;H01S5/062;H01S5/0625;H01S5/12;H01S5/22;H01S5/227;H01S5/323;H01S5/40;(IPC1-7):H01L27/15 |
主分类号 |
H01S5/026 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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