发明名称 Half-bridge high voltage gate driver providing protectin of a transistor
摘要 A gate drive integrated circuit for switching power transistors using an external controller includes a gate driving capability and low quiescent current and allows use of a bootstrap supply technique for providing the logic supply voltage. The gate driver integrated circuit detects power transistor desaturation, protecting a desaturated transistor from transient over voltages by smoothly turning off the desaturated transistor via a soft shutdown sequence. A fault control circuit of the gate driver integrated circuit manages protection of supply under-voltage and transistor desaturation and is capable of communicating with a plurality of gate driver integrated circuits in a multi-phase system using a dedicated local network.
申请公布号 US2004120090(A1) 申请公布日期 2004.06.24
申请号 US20030696711 申请日期 2003.10.29
申请人 INTERNATIONAL RECTIFIER CORPORATION 发明人 GALLI GIOVANNI;GIANDALIA MARCO;MERELLO ANDREA
分类号 H01L27/04;H01L21/822;H02M1/00;H02M1/08;H02M1/32;H02M3/337;H03K17/08;H03K17/56;(IPC1-7):H01H73/00 主分类号 H01L27/04
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