| 摘要 |
PURPOSE: A method for forming an IMD(InterMetal Dielectric) of a semiconductor device is provided to flatly form the IMD without the amplification of micro defects by using an HSQ(Hydrogen SilsQuioxane) layer of an SOG(Spin On Glass) manner as the IMD. CONSTITUTION: An insulating layer(11) with a plurality of contact holes(12) is formed on a semiconductor substrate(10). A tungsten layer is formed on the entire surface of the resultant structure. Metal lines(13a) are formed in the contact holes by carrying out a CMP(Chemical Mechanical Polishing) process on the tungsten layer. At this time, micro defects(14) are generated on the resultant structure. An HSQ layer(16) is formed on the entire surface of the resultant structure. An RTA(Rapid Thermal Annealing) process is carried out on the resultant structure at the temperature of 400°C, or higher.
|
