| 摘要 |
PURPOSE: A lateral phase change memory and a manufacturing method thereof are provided to decrease power consumption and to improve programming efficiency by reducing operating voltage and current of the memory using sub-lithographic distance technique. CONSTITUTION: Conductive material is formed on a substrate(150). The conductive material is selectively removed therefrom, so that a pair of electrodes(130,140) are formed. At this time, the pair of electrodes is spaced apart from each other as much as a sub-lithographic distance or less. Phase change material(120) is formed between the pair of electrodes. The conductive material is removed by using etching.
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