| 摘要 |
<P>PROBLEM TO BE SOLVED: To prevent a shrink hole from being formed in a filling material to be embedded in an insulated trench in a memory cell semiconductor structure equipped with trench capacitors. <P>SOLUTION: Two or more trenches are provided in a semiconductor substrate 10 by using a first hard mask 50, a capacitor plate 20 is formed by embedding polysilicon, then after the first hard mask 50 is moved backward by a predetermined distance, a second hard mask is formed in such a manner as to overlap part of the first hard mask and at the same time extend on the polysilicon in the trench beyond the first hard mask, a shallow insulated trench structure ST having a small aspect ratio is formed by the use of the second hard mask by etching part of the polysilicon in each trench and the semiconductor substrate between trenches in such a manner as to span the two trenches, and after the second mask is removed, the trench structure ST is filled with the filling material FI for flattening. <P>COPYRIGHT: (C)2004,JPO |
